Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

Journal Title: UNKNOWN - Year 2015, Vol 4, Issue 2

Abstract

At low lattice temperature (

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  • EP ID EP356607
  • DOI -
  • Views 52
  • Downloads 0

How To Cite

(2015). Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer. UNKNOWN, 4(2), -. https://www.europub.co.uk/articles/-A-356607