APPLICATION OF POROUS GaAs IN THE MANUFACTURE OF SCHOTTKY DIODES
Journal Title: Вісник Кременчуцького національного університету імені Михайла Остроградського - Year 2018, Vol 1, Issue 108
Abstract
Purpose. To study the electrical properties of Pd / por-GaAs / n-GaAs. It is of great interest since the efficiency of porous electronic devices based on GaAs is expected to increase. The electrochemistry of Si (and of other semiconductors) exhibits a large range of peculiar phenomena, many of which are not well understood at present. In contrast to the electrical properties of Pd/n-GaAs Schottky diodes which are vastly investigated, the electronic properties of Pd/porous GaAs have not been studied until now except a few number of publications dealing with electrical characteristics of porous GaAs/p+-GaAs structures and Au/porous-GaAs Schottky diode gas sensor. Methodology. When studying the work of Schottky diodes based on por-GaAs, the most important parameters are the height of the potential barrier (Φb) and the ideality coefficient (n). The first determines the possible magnitude of the reverse currents, and also indicates the properties of the contact. The coe fficient of ideality determines the degree of deviation of the current-voltage characteristic (CVC) of a Schottky diode from an ideal model. To measure these two key parameters, the I-V method. Results. The increase in barrier height affects the factor of ideality. With the recommended method of thermal treatment of Pd / por -GaAs barrier transitions, the ideality factor values vary in the range n = 1.39 ... 1.42, according to the results of calculations for the I -V characteristics by different methods, the relative error of measurements does not exceed ± 2%. The obtained barriers height potential from I(V) measurements are lower than those calculated from the expected theoretical work function difference between isolated Pd metal and n-type porous GaAs and n+-GaAs semiconductors, which demonstrated the consistency of the presence of interface states. Originality. The main error in the calculated parameters in the investigated diode is made by the discrepancy between the real I-V characteristic of its model: the temperature dependence of the height of the barrier and the dependence of the ideality factor on the voltage. The practical value. The proposed method will improve the quality produced by por-GaAs, which is used in the manufacture of various gas sensors.
Authors and Affiliations
А. Oksanich, М. Kogdas, O. Holod, M. Maschenko
Keywords
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- EP ID EP659430
- DOI 10.30929/1995-0519.2018.1.22-28
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