Effect of Interaction in System ZnS(ZnO)-Sb2S3-Ge on Parameters of the Produced thin Films

Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3

Abstract

Exchange reactions of ZnO impurity in zinc sulfide with Sb2S3 and Ge additives are investigated by XRDA, IR spectroscopy and electronic spectroscopy of diffuse reflectance. Possibility of entire sulfidizing of ZnO with antimony sulfide and production of a single-phase product – ZnS sfalerite is established. Interaction in subsystem Sb2S3–Ge results in formation of a glass-crystalline composite. Test of ZnS cleaned from oxide impurity, and also composites ZnS–Ge and Sb2S3–Ge by thermal evaporation in vacuum has made possible receiving thin-film coatings with high optical and operational parameters.

Authors and Affiliations

V. F. Zinchenko, V. E. Chygrynov, O. V. Mozkova, I. R. Magunov, I. P. Kovalevska

Keywords

Related Articles

Synthesis of Nanosized Powders with the Structure of Perovskite

The aim of this work was to create and study of ferrite lanthanum powders, using sol-gel technology with participation of auto-combustion. After the sintering at a temperature of 1123 K only one phase, which corresponded...

Formation of Spherulites in Electrodeposited Alloys Fe-Ni and Fe-Cr-Ni

With the use of the methods of scanning electron microscopy and X-ray diffractometry the distinctive features of spherulites creation during electrodeposition of Fe-Ni and Fe-Cr-Ni alloys from sulfate electrolyte on low-...

Polymorphic Transition of PbO, Initiated by Curing Conditions of Mesocomposites Under Action of Constant Physical Fields

Influence of physical-chemical factors at forming three-dimension network of thermosetting plastic in simulations action of constant physical field upon capable to polymorphic transition crystalline ((form of PbO first s...

Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution

The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure...

Structure and Transport Phenomena in films Pb18Ag2-xSbxTe20 (LAST) on Sital Substrate

Influence of the thickness of thin films based compounds Pb18Ag2-xSbxTe20 (x = 0,5; 1,0; 1,5), deposited on sital substrates from their structure and scattering mechanisms are research. Defined that the dominant role pla...

Download PDF file
  • EP ID EP317684
  • DOI -
  • Views 68
  • Downloads 0

How To Cite

V. F. Zinchenko, V. E. Chygrynov, O. V. Mozkova, I. R. Magunov, I. P. Kovalevska (2014). Effect of Interaction in System ZnS(ZnO)-Sb2S3-Ge on Parameters of the Produced thin Films. Фізика і хімія твердого тіла, 15(3), 579-583. https://www.europub.co.uk/articles/-A-317684