FIN-FET BASED HIGH GAIN OP-AMP WITH SLEW RATE ENHANCEMENT IN 45-NM REGIME
Journal Title: INTERNATIONAL JOURNAL OF ENGINEERING TECHNOLOGIES AND MANAGEMENT RESEARCH - Year 2019, Vol 6, Issue 7
Abstract
In this paper dynamic biasing technique is used for the enhancing the slew rate of the designed Op-Amp. The proposed FinFET based Op-Amp has been verified through Hspice simulator in the standard 45nm Silicon on Insulator FinFET library. The proposed op amp has two stages Miller compensated configuration. A biasing circuit (DSB circuit) is used for dynamic switching of the biasing voltage of the op amp. This leads to lower power consumption, wide ICMR range, and high gain stability. The proposed op amp has a power consumption of 661.83 μW. It has a dual supply voltage of -1.0V and 1.0V. The input common mode range (ICMR) is -800 mV to +900 mV. The Op-Amp has a slew rate of 1.5 KV/μs. Voltage gain of the op amp is 90.4dB. Due to the use of SOI FINFET devices the op amp has relatively less leakage current as compared to similar bulk MOSFET device op amps. The op amp has unity gain bandwidth of 1.27 GHz. Thus, it can be used to transmission and processing of audio and video signals.
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- EP ID EP606054
- DOI 10.5281/zenodo.3341455
- Views 132
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