Growth Indices of Siberian Pine of Different Geographical Origin Grafted on a Scots Pine Rootstock
Journal Title: Lesnoy Zhurnal (Russian Forestry Journal) - Year 2020, Vol 11, Issue 2
Abstract
Forests dominated by Siberian pine (Pinus sibirica Du Tour) occupy about 40 mln ha in Russia. They fulfill soil- and water-protective roles, produce oxygen, and are the source of valuable nuts, wood, and other materials. The 36-year-old grafted trees of Siberian pine growing on a hybrid seed plantation in the suburban area of Krasnoyarsk region were the study object. A comparison of growth indices of 36-year-old ramets of Siberian pine of different geographical origin was the research purpose. Graftings were made on the Scots pine young growth in 1982. Grafting stocks were cut from plants grown from seeds harvested in 1960 in populations of different geographical origin. The location of the initial populations differs in latitude by 12°, longitude by 64° and altitude by 900 m above sea level. It has been found that the average height of 36-year-old grafted trees depending on geographical origin varies between 12.4 and 15.0 m; the trunk diameter – 29.7 and 40.9 cm; and the crown diameter – 6.4 and 7.6 m. Clones of Tomsk origin are characterized by the best growth. Clones of the northern populations (Komi and Sakha Republics) are characterized by the lowest height. The average diameter of scion exceeds the diameter of rootstock by 6.4–39.7 % depending on the graft geographical origin. Good graft intergrowth (the scion diameter is equal to the rootstock diameter) is observed in 10–27 % of trees. A relationship was found between the grafted trees: close, between trunk and crown diameter (r = 0.855); trunk diameter and crown volume (0.827); significant, between trunk diameter and crown length (0.520). It has been established that both the geographical origin and the clone belonging of scion influence on the growth intensity of the grafted trees and intergrouth of the grafted components. The obtained results can be used in creation of clonal plantations of the second generation.
Authors and Affiliations
R. N. Matveeva, О. F. Butorova, N. P. Bratilova, I. E. Shcherba, V. V. Komarnitsky
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