IMPLEMENTATION OF HIGH-K DIELECTRIC MATERIAL/METAL GATE IN DOUBLE GATE MOSFET
Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 4
Abstract
With the use of Double Gate MOSFET scalability of the device increases at the same time drain current reducing the Short Chanel Effects increases. With linear rise in on current there is exponential rise in off current. Also with decrease in dimensions gate oxide thickness decreases thus gate tunneling increases. Also using N Poly Silicon as gate material leads to increase in series capacitance due to depletion region generated in N Poly Silicon. So usage of High-k dielectric material and metal gate is a good solution. In this paper we propose use of High-k dielectric and metal gate in DG MOSFET and compare it with conventional DG MOSFET with Silicon Dioxide as gate oxide and metal gate as gate material using Visual TCAD 2-D. Effect of variation of metal gate and Dielectrics is observed.
Authors and Affiliations
Bharti Sharma
Keywords
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