Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 1
Abstract
Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has been obtained for the thin films deposited in pure Ar and subsequently heat treated at 923 K. The structure of the as-deposited indium saving indium-tin oxide films was amorphous and the crystallinity was improved with increasing heat treatment temperature. An increase in the heat treatment temperature does not enhance the transmittance of the films at oxygen flow rate higher than 0.4 cm3/min.
Authors and Affiliations
Leandro Voisin, Makoto Ohtsuka, Svitlana Petrovska, Bogdan Ilkiv, Ruslan Sergiienko, Takashi Nakamura
Keywords
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- EP ID EP263414
- DOI 10.15330/pcss.18.1.69-74
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