Investigation of the Effect of the Electron-Beam Crucible Zone Melting of Metallurgical Silicon on Refining and Structure Formation of Ingots
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 2
Abstract
The paper presents the results of studies obtained with the development of the technology of electron-beam crucible impregnation of metallurgical silicon. It is shown that refining of silicon from background and dopant impurities in electron-beam crucible-free zone melting occurs by zone purification during melting and as a result of evaporation of impurities from the sample surface. The mathematical model and computational experiment were been performed to determine the temperature gradient at different rates of zone melting. It was found the diapason of temperature gradients, which provides the columnar structure of crystallites and the purification of the samplesdue the melting with the zone recrystallization procedure. The level of the resistivity of the ingots increases at the end.
Authors and Affiliations
O. R. Gokhman, Yu. A. Asnis, N. V. Piskun, O. A. Velykoivanenko, G. F. Rozynka, A. S. Milenin, V. M. Babych
Keywords
Related Articles
- EP ID EP264117
- DOI 10.15330/pcss.18.2.228-235
- Views 69
- Downloads 0
Effect of Yttrium Oxide Impurities on the Structure and Properties of Metallic Hafnium
The influence of yttrium oxide impurity content of 0 to 0.4 wt.% on the structure and microhardness metal hafniuminvestigated. It is shown that grain size decreases and the Microhardness of hafnium increases monotonicall...
Compensation Effect in the Kinetics of the Cd1-xMnxTe Solid Solution Chemical Etching
The kinetics of the chemical dynamic polishing of CdTe and Cd1-xMnxTe (0,04< х <0,5) using iodine containing (I2–HI) and iodine emerging etchants based on Н2О2–НІ and the temperature dependence of the chemical dissolutio...
Sistem Criate Hight Vojltag Frequency-Impuls Electric Fields for the Obtaining Stress-Strain Surface
In this article development and criate new model phizical-technical obtaining material technological equipment the method higth-friquency plazmy plating-flame carboids and nitralloy cohesion hight-temepature metal IV - V...
Selective Etching of ZnхCd1-хTe Single Crystals
Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. Thi...
Core-Level States of Single-Electron Adsorption Complexes Ge on Si (001) (4x2)
Calculations (DFT, B3LYP, 6-31 G**) chemical shifts core-level components of germanium atoms, which are included in the surface layer of cluster Si96H84•Ge2, modeling complex molecular adsorption on germanium faces recon...