Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 1
Abstract
The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.
Authors and Affiliations
V. A. Romaka, P. -F. Rogl, Yu. V. Stadnyk, L. P. Romaka, R. O. Korzh, D. Kaczorowski, V. Ya. Krayovskyy, A. M. Нoryn
Keywords
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- EP ID EP312180
- DOI 10.15330/pcss.16.1.111-115
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