Low Subthreshold Leakage Power Domino XOR Cell
Journal Title: International Journal of Electronics Communication and Computer Technology - Year 2014, Vol 4, Issue 3
Abstract
With the advancement of technology, the power consumption has become major cause of concern in VLSI system. Technology scaling offers reduction in supply voltage and threshold voltage, but at the cost of increasing leakage current. The reduction in magnitude of leakage current is very important in order to reduce overall power consumption of the design. In this paper, a new domino XOR cell using hybrid technology is proposed which consumes less leakage current and power as compared to existing design. The simulation results illustrate the superiority of proposed domino XOR cell over existing design in terms of subthreshold power at increasing input voltage and temperature.
Authors and Affiliations
Payal Soni| Electronics and Communication Department, FET Mody University of Science & Technology Lakshmangarh, India, Shiwani Singh| Electronics and Communication Department, FET Mody University of Science & Technology Lakshmangarh, India
Keywords
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- EP ID EP8396
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