Novel concepts of negative-n optics in master’s level educational courses
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
The novel ideas of negative refraction index (n) optics suitable for teaching special courses in universities at master’s level are systematized and analyzed. The most important innovative ideas in this field are recounted in the logical order necessary for achieving the best understanding of the material. They are: the opposite signs of phase and group velocities of light; the change of the ordered right-hand triad of vectors E, B and V from the right-handed to the left-handed one; the change of the sign of the Doppler effect; the bent of the incident light, when entering the negative n material, in the “wrong” direction; the emergence of new class of materials – artificial metamaterials that have negative n; current state of the search for possibilities to achieve invisibility.
Authors and Affiliations
G. Yu. Rudko
Keywords
Related Articles
- EP ID EP216947
- DOI 10.15407/spqeo20.02.235
- Views 65
- Downloads 0
Wave equation solution for multilayer planar waveguides in a spatial frequency domain
Possibilities of new numerical method for solving the wave equation of multilayer planar waveguide were investigated. The method is based on the use of Fourier transform to the wave equation and its solution in the frequ...
Quantitative optical trapping and optical manipulation of micro-sized objects
An optical tweezers technique is used for ultraprecise micromanipulation to measure positions of micrometer scale objects with a precision down to the nanometer scale. It consists of a high performance research microscop...
Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence i...
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin film
The paper focuses on experimental study of the photovoltage time decay in ITO-Ge-Si heterojunction with Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfu...
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg
The influence of magnesium impurities on luminescent properties of ZnS:Cu,Mg using obtained by self-propagating high-temperature synthesis (SHS) has been investigated. Special attention was paid to changes of photolumine...