On the low temperature resistivity measurement of CdSe thin film

Abstract

Most group II-VI compounds are direct band gap semiconductors with high optical absorption and emission coefficients .Cadmium Selenide is a leading candidate with high potential towards many applications. The authors present their investigations dealing with preparation and some electrical characterization of the CdSe thin films. The films were deposited onto a well-cleaned glass substrates using thermal evaporation technique. The dependence of electrical resistivity of CdSe thin film in low temperature range has been studied. R.K.Shah | H.O.Parmar | H.S.Patel"On the low temperature resistivity measurement of CdSe thin film" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-2 , February 2017, URL: http://www.ijtsrd.com/papers/ijtsrd65.pdf http://www.ijtsrd.com/other-scientific-research-area/physics/65/on--the-low-temperature-resistivity-measurement-of-cdse-thin-film/rkshah

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  • EP ID EP357072
  • DOI -
  • Views 185
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How To Cite

(2017). On the low temperature resistivity measurement of CdSe thin film. International Journal of Trend in Scientific Research and Development, 1(2), -. https://www.europub.co.uk/articles/-A-357072