Performance limits of terahertz zero biased rectifying detectors for direct detection
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (opt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve opt ~ 23 kV/W and NEPopt ~ 110–12 W/Hz1/2, respectively. At low radiation frequency in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (hetero-junction FETs) with comparable device impedances.
Authors and Affiliations
A. G. Golenkov, F. F. Sizov
Keywords
Related Articles
- EP ID EP178066
- DOI 10.15407/spqeo19.02.129
- Views 94
- Downloads 0
Smart nanocarriers for drug delivery: controllable LSPR tuning
Gold nanostructures are considered as a potential platform for building smart nanocarriers that will form the basis of novel methods of targeted delivery and controlled release of drugs. However, to ensure maximum effici...
Preparation and study of porous Si surfaces obtained using the electrochemical method
Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in p...
Influence of mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with adsorbed atom
The dispersion law of elastic surface acoustic waves and the energy width of the surface acoustic mode are found to the long-wave approximation depending on the concentration of the adsorbed atoms and the deformation pot...
The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide...
Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods
In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using...