Temperature effect on light polarization in uniaxial crystals

Abstract

It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial crystal, and analyzer. These effects introduce systematic errors in the results of researching the nonlinear processes. To minimize this harmful effect, polarization researches must be carried out at a constant sample temperature. For example, research of the nonlinear polarization processes in CdS should be done with a sample temperature uncertainty no higher than +-1 K.

Authors and Affiliations

M. R. Kulish, V. M. Litvinova, M. I. Malysh, I. O. Sokolovskyi

Keywords

Related Articles

Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures

The dynamical screening function of two-dimensional electron gas in a wide HgTe quantum well (QW) has been numerically modeled in this work. Calculations were performed in the Random Phase Approximation (RPA) framework a...

Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode

Dependences of the depletion widths in a radial core-shell p-n diode on the radius of metallurgical boundary of the p-n junction have been studied theoretically in detail. While the depletion width of the core increases...

Van der Waals interaction between surface and particle with giant polarizability

We show that a nanoparticle with a “giant” polarizability (i.e., with the polarizability volume significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased van der Wa...

Nanostructuring the SiOx layers by using laser-induced self-organization

The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matri...

Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation

Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have sh...

Download PDF file
  • EP ID EP177827
  • DOI 10.15407/spqeo19.01.044
  • Views 111
  • Downloads 0

How To Cite

M. R. Kulish, V. M. Litvinova, M. I. Malysh, I. O. Sokolovskyi (2016). Temperature effect on light polarization in uniaxial crystals. Semiconductor Physics, Quantum Electronics and Optoelectronics, 19(1), 44-46. https://www.europub.co.uk/articles/-A-177827