The Influence of Technology Modes on “Hat Wall” Method on Structure and Electrical Properties of SnTe Films
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
The results of complex studies of the structure and electrical properties of vapor-phase condensation of SnTe, deposited in the method of "hot wall" on fresh chips of (111) single crystals of BaF2 by various technological factors. The stable p-type conductivity condensates explained by displacement of homogeneity SnTe compound on the side of Tellurium, the value of which depends on the conditions for obtaining.
Authors and Affiliations
I. I. Chaviyak
Keywords
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