THE TEMPERATURE INFLUENCE ON TENSOSENSITIVITY OF STRAIN SIGLE CRYSTALS N-GE
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 2
Abstract
Piezoresistance of single crystals n-Ge in case uniaxial pressure in [100] crystallographic direction is investigated. The dependencies of coefficient of tensosensitivity for different fixed temperature are obtained. It was shown that the maximum coefficient of tensosensitivity correspond pressure range 2,3–2,5 GPa and reduce with increasing of temperature. That is result of the "exception" mechanism of electron scattering on intervalley and optical phonons due inversion of (L1-Δ1) type of absolute minimum in n-Ge. At the temperatures of T>240 K and high uniaxial pressures needs additionally to take into account the increase of concentration of electrons in the conduction band due to intrinsic conductivity. Іntrinsic conductivity influences on the value of piezoresistance and coefficient of tensosensitivity of n - Ge.
Authors and Affiliations
O. V. Burban
Keywords
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- EP ID EP399197
- DOI 10.18524/1815-7459.2015.2.73601
- Views 107
- Downloads 0
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