Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombi-nation process as well as the photoconductivity mechanism was discussed.
Authors and Affiliations
S. A. Iliash, S. V. Kondratenko, A. S. Yakovliev, V. P. Kunets, Yu. I. Mazur, G. J. Salamo
Keywords
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- EP ID EP177844
- DOI 10.15407/spqeo19.01.075
- Views 117
- Downloads 0
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