Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: P. V. Parphenyuk, A. A. Evtukh Subject(s):
X-Ray Diffraction Analysis at Ultrasonic Welding Journal title: Analele Universitatii "Dunarea de Jos" din Galati. Fascicula IX, Metalurgie si Stiinta Materialelor Authors: Constantin DUMITRACHE, Mihaela BĂRHĂLESCU, Adrian SABĂU, Corneliu COMANDAR Subject(s):
