Electrical Instability of CdTe:Si Crystals
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 1
Abstract
Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Sii - shallow donors; and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Sii (and/or SiCd). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Siі and provides semi-insulating state by forming deep acceptor complexes (SiCd-VCd2-)- with (Еv + 0.65 eV). Besides, the submicron silica precipitates, that have a tend to "dissolution" at relatively low temperatures, can act as electrically active centers.
Authors and Affiliations
Ye. S. Nykoniuk, P. M. Fochuk, S. V. Solodin, M. O. Kovalets, Z. I. Zakharuk, O. E. Panchuk
Keywords
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- EP ID EP263402
- DOI 10.15330/pcss.18.1.29-33
- Views 109
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