Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO2(Si) films containing the silicon nanoclusters embedded into insulating SiO2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO2(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
Authors and Affiliations
O. L. Bratus, A. A. Evtukh, O. V. Steblova, V. M. Prokopchuk
Keywords
Related Articles
- EP ID EP177811
- DOI 10.15407/spqeo19.01.009
- Views 90
- Downloads 0
Ellipsometry and optical spectroscopy of low-dimensional family TMDs
Here, we report a comprehensive study of fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and...
Ellipsometry of hybrid noble metal-dielectric nanostructures
Angular ellipsometric measurements of thin Ag, Cu films covered by HfO 2 protective layer were performed. The ellipsometric parameters ψ and ∆ were measured in θ = 43°...85° light incidence angle range, where ψ is the az...
Protective applications of vacuum-deposited perfluoropolymer films
The paper summarizes in brief applications of perfluoropolymer thin films deposited from the gas phase by several different methods, for protection of various materials and devices both at the research stage and already...
Structure and Raman spectra of (Cu6PS5I)1–x(Cu7PS6)x mixed crystals
Mixed (Cu6PS5I)1–x(Cu7PS6)x crystals were grown using a direct crystallization technique. Being based on the X-ray diffraction data, their crystal structure was studied, showing face-centred cubic lattice for Cu6PS5I-ric...
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heat...