Ion-selective field-effect transistors. Threshold voltage calculation
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2012, Vol 0, Issue 50
Abstract
Ion-selective field-effect transistors (ISFET) are being developed and improved to study ion solution composition. It is necessary to determine threshold ISFET voltage on the basis of process data for design and improvement of sensor control circuit. The threshold voltage analytical calculation for p-channel ISFET is presented in this article.
Authors and Affiliations
M. Prischepa, S. Lozovyi
Keywords
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- EP ID EP309207
- DOI 10.20535/RADAP.2012.50.105-113
- Views 88
- Downloads 0
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