Photoconductivity relaxation and electron transport in macroporous silicon structures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.
Authors and Affiliations
L. A. Karachevtseva, V. F. Onyshchenko, A. V. Sachenko
Keywords
Related Articles
- EP ID EP265335
- DOI 10.15407/spqeo20.04.475
- Views 95
- Downloads 0
Novel concepts of negative-n optics in master’s level educational courses
The novel ideas of negative refraction index (n) optics suitable for teaching special courses in universities at master’s level are systematized and analyzed. The most important innovative ideas in this field are recount...
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
Performed in this work are the researches of the influence of microwave irradiation (2.45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity...
Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid....
Peculiarities of near-electrode relaxation processes in the polyethylene melt filled with graphite and carbon black
By using the oscilloscope method within the frequency range 10 to 106 Hz at the temperature 492.1 K and pressure 11.31 MPa at the output of the single-screw extruder, the dielectric properties of the composite melt – lin...
Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering
Cu6PS5I-based thin films were deposited onto silicate glass substrates by non-reactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscop...